CS20N50ANH mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching
l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche .
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
.
VDSS
500
CS20N50 ANH, the silicon N-channel Enhanced ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
230
which reduce the conduction loss, improve switching
RDS(ON)Typ
0.25
performance and enhance the avalanc.
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